を Dc 電流ゲイン (hFE) (分) @ Ic 、 Vce
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ドライブ電圧 (最大 Rds で、最小 Rds On)
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Vce (on) (最大) @ Vge 、 Ic
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電流排水 (Idss) @ Vds (Vgs = 0)
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Transistor Polarity
N-Channel
Number of Channels
1 Channel
Vds - Drain-Source Breakdown Voltage
200 V
Id - Continuous Drain Current
44 A
Rds On - Drain-Source Resistance
54 mOhms
Vgs - Gate-Source Voltage
- 30 V, + 30 V
Vgs th - Gate-Source Threshold Voltage
1.8 V
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 175 C
Pd - Power Dissipation
3.8 W