原産地
California, United States
を Dc 電流ゲイン (hFE) (分) @ Ic 、 Vce
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ドライブ電圧 (最大 Rds で、最小 Rds On)
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Vce (on) (最大) @ Vge 、 Ic
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電流排水 (Idss) @ Vds (Vgs = 0)
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Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25°C
340mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
2.5Ohm @ 300mA, 10V
Vgs(th) (Max) @ Id
2.5V @ 250uA
Gate Charge (Qg) (Max) @ Vgs
1.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
27.5 pF @ 30 V